The S8050H is an NPN bipolar junction transistor (BJT) known for its reliable performance and versatile applications. As an NPN transistor, it operates with a positive voltage at the collector concerning the emitter. The S8050H is an enhanced version of the S8050 transistor, featuring improved characteristics and specifications.
Let’s explore the features, characteristics, technical specifications, and applications of the S8050H transistor.
Features of S8050H Transistor
NPN Transistor: The S8050H is an NPN-type transistor, allowing it to amplify and control current flow effectively.
Enhanced Version: As an enhanced version of the S8050, the S8050 offers improved performance and characteristics.
High Current Gain: The transistor has a high DC current gain, denoted as hFE. This feature enables it to amplify weak input signals with a relatively small base current.
Versatility: The transistor’s versatility makes it suitable for a wide range of electronic circuits and applications.
Characteristics of S8050H Transistor
Collector-Emitter Voltage (VCEO): The transistor typically has a maximum collector-emitter voltage rating of 40V, which specifies the maximum voltage it can withstand when the collector and emitter are reverse-biased.
Collector-Base Voltage (VCBO): The maximum collector-base voltage for the S8050H is around 60V, indicating the highest voltage it can withstand between the collector and base when the emitter is open-circuited.
Emitter-Base Voltage (VEBO): The maximum emitter-base voltage is approximately 5V, signifying the highest voltage the transistor can endure between the emitter and base when the collector is open.
Collector Current (IC): The transistor can handle a maximum continuous collector current of 700mA. This rating defines its current-carrying capacity.
Technical Specifications of S8050H Transistor
- Type: NPN
- Package Type: Typically comes in a small SOT-23 surface mount package.
- Maximum Collector-Emitter Voltage (VCEO): 40V
- Maximum Collector-Base Voltage (VCBO): 60V
- Maximum Emitter-Base Voltage (VEBO): 5V
- Maximum Collector Current (IC): 700mA
- Power Dissipation (Ptot): 625mW
- DC Current Gain (hFE): Typically ranges from 100 to 600
Applications of S8050H Transistor
Amplifiers: The transistor is commonly used in audio amplifiers, signal amplifiers, and voltage amplifiers due to its high gain and amplification capabilities.
Switching Circuits: Its fast switching speed and moderate power handling make the S8050 H suitable for various switching applications in digital logic circuits.
Voltage Regulation: The can be used in voltage regulator circuits to stabilize output voltages in power supplies.
Oscillators: It can be utilized in oscillator circuits to generate stable and low-frequency signals.
Sensor Interface: The S8050 H acts as an interface between sensors and microcontrollers, converting weak sensor signals into usable voltage levels.
LED Drivers: Due to its ability to control current flow, the S8050H is used in LED driver circuits for controlling the brightness of LEDs.
In conclusion, the S8050H transistor is a reliable and versatile component used in various electronic applications, including amplification, switching, voltage regulation, and sensor interfacing. Its improved characteristics and high current gain make it suitable for low-power electronic circuits where accurate signal amplification is essential.
Designers and hobbyists can confidently use this transistor in their projects, knowing it offers enhanced performance and reliability.
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